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تسجيل مستخدم جديدترانزستور الكتروليتي العمودي العمل على جهد قليل جدا وكثافة تيار كبير
Vertical electrolyte transistor operating at very low voltage and high current density
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تأليف
Keli Fabiana Seidel
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في هذا العمل ، يتم الإبلاغ عن ترانسيستور الإلكتروليتي العمودي (VET) الذي يستند بنيته إلى طبقات متعامدة كما هو موضح أدناه: الاتصال السفلي (مصدر أو مخرج) - قناة - الإلكترد الوسيط المتصلب (مخرج أو مصدر) - جيل الآيون (الإلكتروليت المغناطيسي للحافظ) - اتصال رأس الحافظ. يصور هذا الVET المتعدد الاستخدامات للعمل كمفتاح الميدان العمودي العضوي المضاد للإلكتروليت (Electrolyte-Gated VOFET) أو ترانسيستور الإلكتروكيمي العمودي (VOECT) كما لم يتم الإبلاغ عنه من قبل. التمييز بين هذه الطرق العمل يتعلق بالسحب الترانسيستور الذي يحدث بسبب الحاملين المحددين أو التيار الآيوني على التوالي. كلا الطرق العمل تظهر أن هذا الVET يمكن أن يعمل في مجال فولتية بطيئة جدًا ويقوم بتحميل ترانسيستانس عالي الكثافة. يجعل هذه الخصائص الملاحظة VETs مرشحا جيدا للتطبيقات في أجهزة آيونترونية وأجهزة الاستشعار الحيوي و / أو حلول الطاقة الضئيلة الضوئية الكهربائية.
In this work it is reported a vertical electrolyte transistor (VET) whose structure is based on stacked layers as described below: bottom contact (source or drain) - channel - permeable intermediate electrode (drain or source) - ion gel (electrolyte gate dielectric) - gate top contact. This VET depicts versatility to work as Electrolyte-Gated Vertical Organic Field Effect Transistor (Electrolyte-Gated VOFET) or Vertical Organic Electrochemical Transistor (VOECT) as never reported before. The distinction of these operation modes is regarding to the transistor transconductance that occurs due to induced charge carriers or ionic current, respectively. Both modes of operation show that this VET is able to work at very low voltage range and drive a high current density. These observed features make VETs a good candidate for applications in iontronic devices, bio-sensors and/or very low power optoelectronic circuits.
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