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The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric response in wide-band gap materials is associated with complex crystal structures and heavier elements. Based on underlying chemical trends, we hypothesize that chalcogenides in crystal structures common to complex oxides may feature many highly-polarizable semiconductors. Research on these materials is motivated by fundamental inquiry into electrons and phonons in solids, and by potential applications in photonics, high-frequency communications, and photovoltaics.
There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse
In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinea
This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental develo
We studied angle-dependent reflectivity spectra of opal photonic crystals infiltrated with cyanine dyes, which are highly polarizable media with very large Rabi frequency. We show that when resonance conditions between the exciton-polariton of the in
Usually microscopic electrostatic field around charged impurity ions is neglected when the ionization energy is concerned. The ionization energy is considered to be equal to that of a lonely impurity atom. Here the energy of the electrostatic field a