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This paper proposes an automatic procedure, based on ROOT data Analysis Framework, for the analysis of Silicon Photomultipliers (SiPM) characteristics. In particular, it can be used to analyze experimental waveforms, from oscilloscope, containing SiPM pulses acquired at different temperatures and bias voltages. Important SiPMs characteristics such as: charge distribution, gain, breakdown voltage, pulse shape (rise time and recovery time) and overvoltage can been calculated. Developed procedure can be easily used to analyze any type of SiPM detectors.
The temperature of a nonneutral plasma confined in a Penning-Malmberg trap can be determined by slowly lowering one side of the traps electrostatic axial confinement barrier; the temperature is inferred from the rate at which particles escape the tra
A mini-PET style detector system is being developed for a plant imaging application with a compact array of silicon photomultipliers (SiPM) replacing position sensitive photomultipliers (PSPMT). In addition to compactness, the use of SiPMs will allow
Since the early days of experimental particle physics photomultipliers (PMTs) have played an important role in the detector design. Thanks to their capability of fast photon counting, PMTs are extensively used in the new-generation of astroparticle p
This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (sipm{}s), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical cross-talk, aft
Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires