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تسجيل مستخدم جديدTopological Floquet Engineering of Twisted Bilayer Graphene
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We investigate the topological properties of Floquet-engineered twisted bilayer graphene above the magic angle driven by circularly polarized laser pulses. Employing a full Moire-unit-cell tight-binding Hamiltonian based on first-principles electronic structure we show that the band topology in the bilayer, at twisting angles above 1.05$^circ$, essentially corresponds to the one of single-layer graphene. However, the ability to open topologically trivial gaps in this system by a bias voltage between the layers enables the full topological phase diagram to be explored, which is not possible in single-layer graphene. Circularly polarized light induces a transition to a topologically nontrivial Floquet band structure with the Berry curvature of a Chern insulator. Importantly, the twisting allows for tuning electronic energy scales, which implies that the electronic bandwidth can be tailored to match realistic driving frequencies in the ultraviolet or mid-infrared photon-energy regimes. This implies that Moire superlattices are an ideal playground for combining twistronics, Floquet engineering, and strongly interacting regimes out of thermal equilibrium.
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We develop a theory for a qualitatively new type of disorder in condensed matter systems arising from local twist-angle fluctuations in two strongly coupled van der Waals monolayers twisted with respect to each other to create a flat band moire super
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Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns ha
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