اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدTopological Edge Transport in Twisted Double-Bilayer Graphene
149
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns has opened new vistas in the topological materials landscape. Here we report on evidence, obtained by combining thermodynamic measurements, local and non-local transport measurements, and theoretical calculations, that robust topologically non-trivial, valley Chern insulators occur at charge neutrality in twisted double-bilayer graphene (TDBG). These time reversal-conserving valley Chern insulators are enabled by valley-number conservation, a symmetry that emerges from the moire pattern. The thermodynamic gap extracted from chemical potential measurements proves that TDBG is a bulk insulator under transverse electric field, while transport measurements confirm the existence of conducting edge states. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering and demonstrate that it does not destroy the edge states, leaving the bulk-boundary correspondence largely intact.
قيم البحث
اقرأ أيضاً
When twisted to angles near 1{deg}, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report the discover
y of a new member of the family, density-wave states, in double bilayer graphene twisted to 2.37{deg}. At this angle the moire states retain much of their isolated bilayer character, allowing their bilayer projections to be separately controlled by gates. We use this property to generate an energetic overlap between narrow isolated electron and hole bands with good nesting properties. Our measurements reveal the formation of ordered states with reconstructed Fermi surfaces, consistent with density-wave states, for equal electron and hole densities. These states can be tuned without introducing chemical dopants, thus opening the door to a new class of fundamental studies of density-waves and their interplay with superconductivity and other types of order, a central issue in quantum matter physics.
A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-
tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive of superconductivity. Here, we report electrical transport measurements of tDBG in which we elucidate the fundamental role of spontaneous symmetry breaking within its correlated phase diagram. We observe abrupt resistivity drops upon lowering the temperature in the correlated metallic phases neighboring the CI states, along with associated nonlinear $I$-$V$ characteristics. Despite qualitative similarities to superconductivity, concomitant reversals in the sign of the Hall coefficient instead point to spontaneous symmetry breaking as the origin of the abrupt resistivity drops, while Joule heating appears to underlie the nonlinear transport. Our results suggest that similar mechanisms are likely relevant across a broader class of semiconducting flat band vdW heterostructures.
We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements, quantum osc
illations of magnetoresistance originating from two bands with different carrier density were observed. The behavior of the carrier densities with respect to the total carrier density were distinct from that of the AB-stacked tetralayer graphene. The carrier density ratio was theoretically analyzed in terms of the model that the induced charge decays exponentially with distance with a screening length {lambda}. The estimated {lambda} was slightly larger than that of AB-stacked graphene, which would possibly reflect the difference in the inter-plane distribution of probability of the wave function.
Twisted double bilayer graphene (TDBG) is an electric-field-tunable moire system, exhibiting electron correlated states and related temperature linear (T-linear) resistivity. The displacement field provides a new knob to in-situ tune the relative str
ength of electron interactions in TDBG, yielding not only a rich phase diagram but also the ability to investigate each phase individually. Here, we report a study of carrier density (n), displacement field (D) and twist angle dependence of T-linear resistivity in TDBG. For a large twist angle 1.5 degree where correlated insulating states are absent, we observe a T-linear resistivity (order of 10 Ohm per K) over a wide range of carrier density and its slope decreases with increasing of n before reaching the van Hove singularity, in agreement with acoustic phonon scattering model. The slope of T-linear resistivity is non-monotonically dependent on displacement field, with a single peak structure closely connected to single-particle van Hove Singularity (vHS) in TDBG. For an optimal twist angle of ~1.23 degree in the presence of correlated states, the slope of T-linear resistivity is found maximum at the boundary of the correlated halo regime (order of 100 Ohm per K), resulting a M shape displacement field dependence. The observation is beyond the phonon scattering model from single particle picture, and instead it suggests a strange metal behavior. We interpret the observation as a result of symmetry-breaking instability developed at quantum critical points where electron degeneracy changes. Our results demonstrate that TDBG is an ideal system to study the interplay between phonon and quantum criticality, and might help to map out the evolution of the order parameters for the ground states.
We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands with the ele
ctric field - distinct from the twisted bilayer system. With electric field, the gap between two emergent flat bands increases monotonically and bandwidth is tuned from 1 meV to 15 meV. These two flat bands with gap result in a series of thermally induced insulator to metal transitions - we use a model, at charge neutrality, to measure the bandwidth using only transport measurements. Having two flat bands with tunable gap and bandwidth offers an opportunity to probe the emergence of correlations.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
