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The recent development of all-electrical electron spin resonance (ESR) in a scanning tunneling microscope (STM) setup has opened the door to vast applications. Despite the fast growing number of experimental works on STM-ESR, the fundamental principles remains unclear. By using a cotunneling picture, we show that the spin resonance signal can be explained as a time-dependent variation of the tunnel barrier induced by the alternating electric driving field. We demonstrate how this variation translates into the resonant frequency response of the direct current. Our cotunneling theory explains the main experimental findings. Namely, the linear dependence of the Rabi flop rate with the alternating bias amplitude, the absence of resonant response for spin-unpolarized currents, and the weak dependence on the actual atomic species.
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by inducing an elect
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglemen
We study the thermoelectric transport of a small metallic island weakly coupled to two electrodes by tunnel junctions. In the Coulomb blockade regime, in the case when the ground state of the system corresponds to an even number of electrons on the i
Magnetic resonance imaging (MRI) revolutionized diagnostic medicine and biomedical research by allowing a noninvasive access to spin ensembles. To enhance MRI resolution to the nanometer scale, new approaches including scanning probe methods have bee
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI