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We report on superconductivity in single crystals of SrTiO$_{3-delta}$ with carrier densities $textit{n} < 1.4 times10^{18}cm^{-3}$, where only a single band is occupied. For all samples in this regime, the resistive transition occurs at $T_{c} approx 65 pm 25 mK$. We observe a zero resistance state for $textit{n}$ as low as $1.03 times10^{17}cm^{-3}$, and a partial resistive transition for $textit{n} = 3.85 times10^{16}cm^{-3}$. We observe low critical current densities, relatively high and isotropic upper critical fields, and an absence of diamagnetic screening in these samples. Our findings suggest an inhomogeneous superconducting state, embedded within a homogeneous high-mobility 3-dimensional electron gas. $T_{c}$ does not vary appreciably when $textit{n}$ changes by more than an order of magnitude, inconsistent with conventional superconductivity.
We investigate the effects of strain on superconductivity with particular reference to SrTiO$_3$. Assuming that a ferroelectric mode that softens under tensile strain is responsible for the coupling, an increase in the critical temperature and range
The properties of quantum materials are commonly tuned using experimental variables such as pressure, magnetic field and doping. Here we explore a different approach: irreversible, plastic deformation of single crystals. We show for the superconducto
In strontium titanate, the Froehlich electron - LO-phonon interaction dominates the electron response and can also provide superconductivity. Because of high LO-phonon frequencies in SrTiO3, the superconducting system is non-adiabatic. We demonstrate
When an electronic system is subjected to a sufficiently strong magnetic field that the cyclotron energy is much larger than the Fermi energy, the system enters the extreme quantum limit (EQL) and becomes susceptible to a number of instabilities. Bri
In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the