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A Datta-Das spin field effect transistor is built of a one-dimensional weak link, with Rashba spin orbit interactions (SOI), which connects two magnetized reservoirs. The particle and spin currents between the two reservoirs are calculated to lowest order in the tunneling through the weak link and in the wide-band approximation, with emphasis on their dependence on the origins of the `bare magnetizations in the reservoirs. The SOI is found to generate magnetization components in each reservoir, which rotate in the plane of the electric field (generating the SOI) and the weak link, only if the `bare magnetization of the other reservoir has a non-zero component in that plane. The SOI affects the charge current only if both reservoirs are polarized. The charge current is conserved, but the transverse rotating magnetization current is not conserved since the SOI in the weak link generates extra spin polarizations which are injected into the reservoirs.
A Datta-Das spin field-effect transistor is built of a heterostructure with a Rashba spin-orbit interaction (SOI) at the interface (or quantum well) separating two possibly magnetized reservoirs. The particle and spin currents between the two reservo
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized cur
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The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result