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تسجيل مستخدم جديدCharacterization and Modeling of 0.18{mu}m CMOS Technology at sub-Kelvin Temperature
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Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18{mu}m standard bulk CMOS technology(1.8V and 5V) at sub-kelvin temperature around 270mK. PMOS and NMOS devices with different width to length ratios(W/L) are tested and characterized under various bias conditions at temperatures from 300K to 270mK. It is shown that the 0.18{mu}m standard bulk CMOS technology is still working at sub-kelvin temperature. The kink effect and current overshoot phenomenon are observed at sub-kelvin temperature. Especially, current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of large and thin-oxide devices at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.
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