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When Fe, which is a typical ferromagnet using d- or f-orbital states, is combined with 2D materials such as graphene, it offers many opportunities for spintronics. The origin of 2D magnetism is from magnetic insulating behaviors, which could result in magnetic excitations and also proximity effects. However, the phenomena were only observed at extremely low temperatures. Fe and graphene interfaces could control spin structures in which they show a unique atomic spin modulation and magnetic coupling through the interface. Another reason for covering graphene on Fe is to prevent oxidation under ambient conditions. We investigated the engineering of spin configurations by growing monolayer graphene on an Fe(111) single crystal surface and observed the presence of sharply branched, 3D tree-like domain structures. Magnetization by a sweeping magnetic field (m-H) revealed that the interface showed canted magnetization in the in-plane (IP) orientation. Moreover, graphene could completely prevent the oxidation of the Fe surface. The results indicate possible control of the spin structures at the atomic scale and the interface phenomena in the 2D structure. The study introduces a new approach for room temperature 2D magnetism.
We have investigated the magnetism of the bare and graphene-covered (111) surface of a Ni single crystal employing three different magnetic imaging techniques and ab initio calculations, covering length scales from the nanometer regime up to several
SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer o
N-Heteropolycyclic aromatic compounds are promising organic electron-transporting semiconductors for applications in field effect transistors. Here, we investigated the electronic properties of 1,3,8,10-tetraazaperopyrene derivatives adsorbed on Au(1
We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited o
The temperature ($it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $it