The plasmon damping has been investigated using resonant microwave absorption of two-dimensional electrons in disks with different diameters. We have found an unexpected drastic reduction of the plasmon damping in the regime of strong retardation. This finding implies large delocalization of retarded plasmon field outside the plane of the two-dimensional electron system. A universal relation between the damping of plasmon polariton waves and retardation parameter is reported.
Diffraction of light at lateral inhomogenities is a central process in the near-field studies of nanoscale phenomena, especially the propagation of surface waves. Theoretical description of this process is extremely challenging due to breakdown of pl
ane-wave methods. Here, we present and analyze an exact solution for electromagnetic wave diffraction at the linear junction between two-dimensional electron systems (2DES) with dissimilar surface conductivities. The field at the junction is a combination of three components with different spatial structure: free-field component, non-resonant edge component, and surface plasmon-polariton (SPP). We find closed-form expressions for efficiency of photon-to-plasmon conversion by the edge being the ratio of electric fields in SPP and incident wave. Particularly, the conversion efficiency can considerably exceed unity for the contact between metal and 2DES with large impedance. Our findings can be considered as a first step toward quantitative near-field microscopy of inhomogeneous systems and polaritonic interferometry.
Rapid progress in electrically-controlled plasmonics in solids poses a question about effects of electronic reservoirs on the properties of plasmons. We find that plasmons in electronically open systems [i.e. in (semi)conductors connected to leads] a
re prone to an additional damping due to charge carrier penetration into contacts and subsequent thermalization. We develop a theory of such lead-induced damping based on kinetic equation with self-consistent electric field, supplemented by microscopic carrier transport at the interfaces. The lifetime of plasmon in electronically open ballistic system appears to be finite, order of conductor length divided by carrier Fermi (thermal) velocity. The reflection loss of plasmon incident on the contact of semi-conductor and perfectly conducting metal also appears to be finite, order of Fermi velocity divided by wave phase velocity. Recent experiments on plasmon-assisted photodetection are discussed in light of the proposed lead-induced damping phenomenon.
Nanomechanical resonators have demonstrated great potential for use as versatile tools in a number of emerging quantum technologies. For such applications, the performance of these systems is restricted by the decoherence of their fragile quantum sta
tes, necessitating a thorough understanding of their dissipative coupling to the surrounding environment. In bulk amorphous solids, these dissipation channels are dominated at low temperatures by parasitic coupling to intrinsic two-level system (TLS) defects, however, there remains a disconnect between theory and experiment on how this damping manifests in dimensionally-reduced nanomechanical resonators. Here, we present an optomechanically-mediated thermal ringdown technique, which we use to perform simultaneous measurements of the dissipation in four mechanical modes of a cryogenically-cooled silicon nanoresonator, with resonant frequencies ranging from 3 - 19 MHz. Analyzing the devices mechanical damping rate at fridge temperatures between 10 mK - 10 K, we demonstrate quantitative agreement with the standard tunneling model for TLS ensembles confined to one dimension. From these fits, we extract the defect density of states ($P_0 sim$ 1 - 4 $times$ 10$^{44}$ J$^{-1}$ m$^{-3}$) and deformation potentials ($gamma sim$ 1 - 2 eV), showing that each mechanical mode couples on average to less than a single thermally-active defect at 10 mK.
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beams injection energy, and distance from the injection point. At low injection energies, we find
electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.
We have found experimentally that the shot noise of the tunneling current $I$ through an undoped semiconductor superlattice is reduced with respect to the Poissonian noise value $2eI$, and that the noise approaches 1/3 of that value in superlattices
whose quantum wells are strongly coupled. On the other hand, when the coupling is weak or when a strong electric field is applied to the superlattice the noise becomes Poissonian. Although our results are qualitatively consistent with existing theories for one-dimensional mulitple barriers, the theories cannot account for the dependence of the noise on superlattice parameters that we have observed.