ﻻ يوجد ملخص باللغة العربية
Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te$_4$---by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators in a well-controlled way.
Topological insulators materialize a topological quantum state of matter where unusual gapless metallic state protected by time-reversal symmetry appears at the edge or surface. Their discovery stimulated the search for new topological states protect
The interplay between topology and magnetism is essential for realizing novel topological states including the axion insulator, the magnetic Weyl semimetals, the Chern insulator, as well as the 3D quantized anomalous Hall insulator. A stoichiometric,
We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale po
The recent discovery of higher-order topological insulators (TIs) has opened new possibilities in the search for novel topological materials and metamaterials. Second-order TIs have been implemented in two-dimensional (2D) systems exhibiting topologi