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We probe electric-field noise near the metal surface of an ion trap chip in a previously unexplored high-temperature regime. We observe a non-trivial temperature dependence with the noise amplitude at 1-MHz frequency saturating around 500~K. Measurements of the noise spectrum reveal a $1/f^{alphaapprox1}$-dependence and a small decrease in $alpha$ between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally-activated two-level fluctuators with activation energies between 0.35~eV and 0.65~eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example defect motion in the solid state and surface adsorbate binding energies. Studying these processes may aid in identifying the origin of excess electric-field noise in ion traps -- a major source of ion motional decoherence limiting the performance of surface traps as quantum devices.
We investigate anomalous ion-motional heating, a limitation to multi-qubit quantum-logic gate fidelity in trapped-ion systems, as a function of ion-electrode separation. Using a multi-zone surface-electrode trap in which ions can be held at five disc
We probe electric-field noise in a surface ion trap for ion-surface distances $d$ between 50 and 300 $mumathrm{m}$ in the normal and planar directions. We find the noise distance dependence to scale as $d^{-2.6}$ in our trap and a frequency dependenc
Scaling up trapped-ion quantum computers requires new trap materials to be explored. Here, we present experiments with a surface ion trap made from the high-temperature superconductor YBCO, a promising material for future trap designs. We show that v
We aim to illuminate how the microscopic properties of a metal surface map to its electric-field noise characteristics. In our system, prolonged heat treatments of a metal film can induce a rise in the magnitude of the electric-field noise generated
Electric-field noise from ion-trap electrode surfaces can limit the fidelity of multiqubit entangling operations in trapped-ion quantum information processors and can give rise to systematic errors in trapped-ion optical clocks. The underlying mechan