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In the presence of crystalline symmetries, certain topological insulators present a filling anomaly: a mismatch between the number of electrons in an energy band and the number of electrons required for charge neutrality. In this paper, we show that a filling anomaly can arise when corners are introduced in $C_n$-symmetric crystalline insulators with vanishing polarization, having as consequence the existence of corner-localized charges quantized in multiples of $frac{e}{n}$. We characterize the existence of this charge systematically and build topological indices that relate the symmetry representations of the occupied energy bands of a crystal to the quanta of fractional charge robustly localized at its corners. When an additional chiral symmetry is present, $frac{e}{2}$ corner charges are accompanied by zero-energy corner-localized states. We show the application of our indices in a number of atomic and fragile topological insulators and discuss the role of fractional charges bound to disclinations as bulk probes for these crystalline phases.
In this paper, we derive a general formula for the quantized fractional corner charge in two-dimensional C_n-symmetric higher-order topological insulators. We assume that the electronic states can be described by the Wannier functions and that the ed
Robust fractional charge localized at disclination defects has been recently found as a topological response in $C_{6}$ symmetric 2D topological crystalline insulators (TCIs). In this article, we thoroughly investigate the fractional charge on discli
Based on first-principles calculations and symmetry analysis, we predict atomically thin ($1-N$ layers) 2H group-VIB TMDs $MX_2$ ($M$ = Mo, W; $X$ = S, Se, Te) are large-gap higher-order topological crystalline insulators protected by $C_3$ rotation
Two-dimensional higher-order topological insulators can display a number of exotic phenomena such as half-integer charges localized at corners or disclination defects. In this paper, we analyze these phenomena, focusing on the paradigmatic example of
We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic $theta$-angle $theta_{em} = frac{pi}{3}$ and a discrete $mathbb{Z}_3$ gauge field. They are the proper generalizations of the T-pfaffian state