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An electric field that builds in the direction against current, known as negative nonlocal resistance, arises naturally in viscous flows and is thus often taken as a telltale of this regime. Here we predict negative resistance for the ballistic regime, wherein the ee collision mean free path is greater than the length scale at which the system is being probed. Therefore, negative resistance alone does not provide strong evidence for the occurrence of the hydrodynamic regime; it must thus be demoted from the rank of a smoking gun to that of a mere forerunner. Furthermore, we find that negative response is log-enhanced in the ballistic regime by the physics related to the seminal Dorfman-Cohen log divergence due to memory effects in the kinetics of dilute gases. The ballistic regime therefore offers a unique setting for exploring these interesting effects due to electron interactions.
We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay
Drag of electrons of 1D ballistic nanowire by a nearby 1D beam of ions is considered. We assume that the ion beam is represented by an ensemble of heavy ions of the same velocity $bf V$. The ratio of the drag current to primary current carried by the
We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two fre
Bound electron-hole excitonic states are generally not expected to form with charges of negative effective mass. We identify such excitons in a single layer of the semiconductor WSe2, where they give rise to narrow-band upconverted photoluminescence
Topological edge states exhibit dissipationless transport and electrically-driven topological phase transitions, making them ideal for next-generation transistors that are not constrained by Moores law. Nevertheless, their dispersion has never been p