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We theoretically analyze the errors in one- and two-qubit gates in SiMOS and Si/SiGe spin qubit experiments, and present a pulse sequence which can suppress the errors in exchange coupling due to charge noise using ideal local rotations. In practice, the overall fidelity of the pulse sequence will be limited only by the quality of the single-qubit gates available: the C-phase infidelity comes out to be $approx 2.5 times$ the infidelity of the single-qubit operations. Based on experimental data, we model the errors and show that C-phase gate infidelities can be suppressed by two orders in magnitude. Our pulse sequence is simple and we expect an experimental implementation would be relatively straightforward. We also evaluate the performance of this gate against $1/f$ noise. Assuming a soft ultraviolet cutoff, we show that the pulse sequence designed for quasistatic noise still performs well when the cutoff occurs below $sim 1$MHz given fast enough one-qubit Rabi frequencies, suppressing the infidelity by an order of magnitude compared to the existing direct adiabatic protocol. We also analyze the effects of nonadiabaticity during finite rise periods, and find that adiabaticity is not a limitation for the current values of exchange coupling.
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support e
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy spectrum and tunn
Addressability of spin qubits in a silicon double quantum dot setup in the (1,1) charge configuration relies on having a large difference between the Zeeman splittings of the electrons. When the difference is not sufficiently large, the rotating wave
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their relaxatio