اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدQuantum time-dependent Monte Carlo simulation of electron devices with 2D linear-band materials: a genuine TeraHertz signature for graphene
302
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
An intrinsic electron injection model for linear band two-dimensional (2D) materials, like graphene, is presented and its coupling to a recently developed quantum time-dependent Monte Carlo simulator for electron devices, based on the use of stochastic Bohmian conditional wave functions, is explained. The simulator is able to capture the full (DC, AC, transient and noise) performance of 2D electron devices. In particular, we demonstrate that the injection of electrons with positive and negative kinetic energies is mandatory when investigating high frequency performance of linear band materials with Klein tunneling, while traditional models dealing with holes (defined as the lack of electrons) can lead to unphysical results. We show that the number of injected electrons is bias-dependent, implying that an extra charge is required to get self-consistent results. Interestingly, we provide a successful comparison with experimental DC data. Finally, we predict that a genuine high-frequency signature due to a roughly constant electron injection rate in 2D linear band electron devices (which is missing in 2D parabolic band ones) can be used as a band structure tester.
قيم البحث
اقرأ أيضاً
In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS s
maller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the accumulated kinetic energy. Particle energy distribution at the semiconductor/oxide interface is studied for different bias conditions and different positions along the channel. The gate current is calculated with a continuum-based post-processing method as a function of the particle distribution obtained from Monte Carlo. Simulation results show that the gate current increases by several orders of magnitude with increasing drain bias and warm electron injection can be an interesting option for programming when short channel effects prohibit the application of larger drain bias.
We present the extension of variational Monte Carlo (VMC) to the calculation of electronic excitation energies and oscillator strengths using time-dependent linear-response theory. By exploiting the analogy existing between the linear method for wave
-function optimisation and the generalised eigenvalue equation of linear-response theory, we formulate the equations of linear-response VMC (LR-VMC). This LR-VMC approach involves the first-and second-order derivatives of the wave function with respect to the parameters. We perform first tests of the LR-VMC method within the Tamm-Dancoff approximation using single-determinant Jastrow-Slater wave functions with different Slater basis sets on some singlet and triplet excitations of the beryllium atom. Comparison with reference experimental data and with configuration-interaction-singles (CIS) results shows that LR-VMC generally outperforms CIS for excitation energies and is thus a promising approach for calculating electronic excited-state properties of atoms and molecules.
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM
and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.
The Bose condensation of 2D dipolar excitons in quantum wells is numerically studied by the diffusion Monte Carlo simulation method. The correlation, microscopic, thermodynamic, and spectral characteristics are calculated. It is shown that, in struct
ures of coupled quantum wells, in which low-temperature features of exciton luminescence have presently been observed, dipolar excitons form a strongly correlated system. Their Bose condensation can experimentally be achieved much easily than for ideal or weakly correlated excitons.
We present a computer simulation of exciton-exciton scattering in a quantum well. Specifically, we use quantum Monte Carlo techniques to study the bound and continuum states of two excitons in a 10 nm wide GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum well. Fr
om these bound and continuum states we extract the momentum-dependent phase shifts for s-wave scattering. A surprising finding of this work is that a commonly studied effective-mass mode for excitons in a 10 nm quantum well actually supports two bound biexciton states. The second, weakly bound state may dramatically enhance exciton-exciton interactions. We also fit our results to a hard-disk model and indicate directions for future work.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
