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We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.
The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semi-classical semiconductor tran
Coherent interactions between spins in quantum dots are a key requirement for quantum gates. We have performed pump-probe experiments in which pulsed lasers emitting at different photon energies manipulate two distinct subsets of electron spins withi
We investigate the spin-to-charge conversion emerging from a mesoscopic device connected to multiple terminals. We obtain analytical expressions to the characteristic coefficient of spin-to-charge conversion which are applied in two kinds of ballisti
Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound states. The competition betwe
A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and cont