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Adsorbate engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide materials. Here, we study shallow bound states induced by charged adatoms on MoS$_2$ using large-scale tight-binding simulations with screened adatom potentials obtained from ab initio calculations. The interplay of unconventional screening in two-dimensional systems and multivalley effects in the transition-metal dichalcogenide (TMDC) band structure results in a rich diversity of bound impurity states. We present results for impurity state wavefunctions and energies, as well as for the local density of states in the vicinity of the adatom which can be measured using scanning tunnelling spectroscopy. We find that the presence of several distinct valleys in the MoS$_2$ band structure gives rise to crossovers of impurity states at critical charge strengths, altering the orbital character of the most strongly bound state. We compare our results to simpler methods, such as the 2D hydrogen atom and effective mass theory, and we discuss limitations of these approaches.
We periodically kick a local region in a one-dimensional lattice and demonstrate, by studying wave packet dynamics, that the strength and the time period of the kicking can be used as tuning parameters to control the transmission probability across t
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tun
Atomically thin transition metal dichalcogenides (TMDs) are ideal candidates for ultrathin optoelectronics that is flexible and semitransparent. Photodetectors based on TMDs show remarkable performance, with responsivity and detectivity higher than 1
Electromagnetic fields bound tightly to charge carriers in a two-dimensional sheet, namely surface plasmons, are shielded by metallic plates that are a part of a device. It is shown that for epitaxial graphenes, the propagation velocity of surface pl
A residual disorder in the gate system is the main problem on the way to create artificial graphene based on two-dimensional electron gas. The disorder can be significantly screened/reduced due to the many-body effects. To analyse the screening/disor