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The development of instrumentation to be operated in high-radiation environments is one of the main challenges in fundamental research. Besides space and nuclear applications, particle physics experiments also need radiation-hard devices. The focus of this paper is a new irradiation facility based on the medical cyclotron located at the Bern University Hospital (Insespital), which is used as a controlled 18 MeV proton source. The adjustable beam current allows for dose rate dependent characterisation over a large dynamic range, from 0.1 to 1000 Grad per hour. The beam can be tuned so that the user can obtain the desired irradiation conditions. A complete study of the device under irradiation is possible thanks to dedicated beam monitoring systems as well as a power control system for the device under irradiation, which can be operated on-line. Further characterisations of the irradiated devices are possible thanks to a laboratory equipped with gamma spectroscopy detectors, ammeters and transient current technique setups.
In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this study show a
Modern avalanche photodiodes (APDs) with high gain are good device candidates for light readout from detectors applied in relativistic heavy ion collisions experiments. The results of the investigations of the APDs properties from Zecotek, Ketek and
Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardne
Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their cert
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in char