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تسجيل مستخدم جديدFrequency control of single quantum emitters in integrated photonic circuits
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Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and
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