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Single crystals of CrSbSe$_3$, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic, temperature- and field-dependent magnetization, temperature-dependent resistivity and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe$_3$ is paramagnetic and isotropic with a Curie-Weiss temperature of $sim$145 K and an effective moment of $sim$4.1 $mu_B$/Cr. A ferromagnetic transition occurs at $T_c$ = 71 K. The $a$-axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along $b$, is the hard axis. Magnetic isotherms measured around $T_c$ do not follow the behavior predicted by simple mean field critical exponents for a second order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving $betasim$0.25, $gammasim$1.38 and $deltasim$6.6.
Recently, two-dimensional ferromagnetic semiconductors have been an important class of materials for many potential applications in spintronic devices. Based on density functional theory, we systematically explore the magnetic and electronic properti
The structural, magnetic, and thermodynamic properties of a new plutonium based compound, Pu2Pt3Si5, are reported. Single crystals produced by a Sn-flux technique have been analyzed showing a ferromagnetic behavior at 58 K. Pu2Pt3Si5 crystallizes in
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be
We report the importance of anisotropic Coulomb interactions in DFT+U calculations of the electronic and magnetic properties of Mn$_3$O$_4$. The effects of anisotropic interactions in Mn$^{2+}$ and Mn$^{3+}$ are separately examined by defining two di