ترغب بنشر مسار تعليمي؟ اضغط هنا

Plasmon-induced demagnetization and magnetic switching in nickel nanoparticle arrays

89   0   0.0 ( 0 )
 نشر من قبل Sebastiaan van Dijken
 تاريخ النشر 2017
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We report on the manipulation of magnetization by femtosecond laser pulses in a periodic array of cylindrical nickel nanoparticles. By performing experiments at different wavelength, we show that the excitation of collective surface plasmon resonances triggers demagnetization in zero field or magnetic switching in a small perpendicular field. Both magnetic effects are explained by plasmon-induced heating of the nickel nanoparticles to their Curie temperature. Model calculations confirm the strong correlation between the excitation of surface plasmon modes and laser-induced changes in magnetization.



قيم البحث

اقرأ أيضاً

57 - R. F. Wang 2007
We report a study of demagnetization protocols for frustrated arrays of interacting single domain permalloy nanomagnets by rotating the arrays in a changing magnetic field. The most effective demagnetization is achieved by not only stepping the field strength down while the sample is rotating, but by combining each field step with an alternation in the field direction. By contrast, linearly decreasing the field strength or stepping the field down without alternating the field direction leaves the arrays with a larger remanent magnetic moment. These results suggest that non-monotonic variations in field magnitude around and below the coercive field are important for the demagnetization process.
Synthetic ferrimagnets are composite magnetic structures formed from two or more anti- ferromagnetically coupled magnetic sublattices with different magnetic moments. Here we report on atomistic spin simulations of the laser-induced magnetization dyn amics on such synthetic ferrimag- nets, and demonstrate that the application of ultrashort laser pulses leads to sub-picoscond magnetization dynamics and all-optical switching in a similar manner as in ferrimagnetic alloys. Moreover, we present the essential material properties for successful laser-induced switching, demonstrating the feasibility of using a synthetic ferrimagnet as a high density magnetic storage element without the need of a write field.
Large area nickel antidot arrays with density up to 10^10 /cm^2 have been fabricated by depositing nickel onto anodic aluminum oxide membranes that contain lattices of nanopores. Electron microscopy images show a high degree of order of the antidot a rrays. Various sizes and shapes of the antidots were observed with increasing thickness of the deposited nickel. New features appear in the antidot arrays in both magnetization and transport measurements when the external magnetic field is parallel to the current direction, including an enhancement and a nonmonotonous field dependence of the magnetoresistance, larger values of the coercive field and remanence moment, and smaller saturation field.
100 - Y. Liu , S. Gliga , R. Hertel 2007
We report on the switching of a magnetic vortex core in a sub-micron Permalloy disk, induced by a short current pulse applied in the film plane. Micromagnetic simulations including the adiabatic and non-adiabatic spin-torque terms are used to investi gate the current-driven magnetization dynamics. We predict that a core reversal can be triggered by current bursts a tenth of a nanosecond long. The vortex core reversal process is found to be the same as when an external field pulse is applied. The control of a vortex cores orientation using current pulses introduces the technologically relevant possibility to address individual nanomagnets within dense arrays.
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been e xamined, where TiO_x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا