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تسجيل مستخدم جديدReal-time X-ray Monitoring of the Nucleation and Growth of AlN Epitaxial Films on Sapphire (0001)
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We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allowed us to follow the structural evolution of strain and roughness from initial nucleation layers to fullyrelaxed AlN films. A growth rate transient was observed, consistent with the initial formation of non-coalesced islands with significant oxygen incorporation from the substrate. Following island coalescence, a steady state growth rate was seen with a continuous shift of the c and a lattice parameters towards the relaxed bulk values as growth progressed, with films reaching a fully relaxed state at thicknesses of about 30 nm.
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This paper has been withdrawn due to the adherance to the double submission policies of a refereed journal. Our apologies.
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