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We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.
We used residual gas analysis (RGA) to identify the species desorbed during field emission (FE) from a carbon nanotube (CNT) fiber. The RGA data show a sharp threshold for H2 desorption at an external field strength that coincides with a breakpoint i
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor opt
We present a proof of concept for a spectrally selective thermal mid-IR source based on nanopatterned graphene (NPG) with a typical mobility of CVD-grown graphene (up to $3000$ cm$^2$V$^{-1}$s$^{-1}$), ensuring scalability to large areas. For that, w
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time cha
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon