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We have investigated the magnetic and magnetotransport properties of Ba$_2$FeMoO$_6$ thin films produced by pulsed laser deposition from optimized bulk material. The films are comprised of grains of crystalline Ba$_2$FeMoO$_6$ with a disordered grain boundary region that lowers the net saturation magnetization of the film and prevents full magnetic alignment below a Curie temperature $T_C$$sim$305 K. Magnetotransport measurements point to the Ba$_2$FeMoO$_6$ grains retaining the high spin polarization of a half-metal up to $T_C$, while the grain boundaries greatly reduce the spin polarization of the intergrain electrical current due to spin-flip scattering. Our results show that a strong spin polarization of the electronic charge carriers is present even in Ba$_2$FeMoO$_6$ films that do not show the ideal bulk magnetic character.
We calculate expressions for the state-dependent quasiparticle lifetime, the thermal conductivity $kappa$, the shear viscosity $eta$, and discuss the spin diffusion coefficient $D$ for Fermi-liquid films in two dimensions. The expressions are valid f
Since oxide materials like Sr$_2$FeMoO$_6$ are usually applied as thin films, we studied the effect of biaxial strain, resulting from the substrate, on the electronic and magnetic properties and, in particular, on the formation energy of point defect
Temperature dependent transport measurements on ultrathin antiferromagnetic Mn films reveal a heretofore unknown non-universal weak localization correction to the conductivity which extends to disorder strengths greater than 100 k$Omega$ per square.
Topological semimetals have been at the forefront of experimental and theoretical attention in condensed matter physics. Among these, recently discovered Weyl semimetals have a dispersion described by a three-dimensional Dirac cone, which is at the r
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ th