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In this brief review we discuss the transient processes in solids under irradiation with femtosecond X-ray free-electron-laser (FEL) pulses and swift-heavy ions (SHI). Both kinds of irradiation produce highly excited electrons in a target on extremely short timescales. Transfer of the excess electronic energy into the lattice may lead to observable target modifications such as phase transitions and damage formation. Transient kinetics of material excitation and relaxation under FEL or SHI irradiation are comparatively discussed. The same origin for the electronic and atomic relaxation in both cases is demonstrated. Differences in these kinetics introduced by the geometrical effects ({mu}m-size of a laser spot vs nm-size of an ion track) and initial irradiation (photoabsorption vs an ion impact) are analyzed. The basic mechanisms of electron transport and electron-lattice coupling are addressed. Appropriate models and their limitations are presented. Possibilities of thermal and nonthermal melting of materials under FEL and SHI irradiation are discussed.
In the framework of swift heavy ion - matter interaction, the thermal spike has proved its worth since nearly two decades. This paper deals with the necessary refinement of the computation due to the kind of materials involved i.e. nanomaterials such
We exposed nitrogen-implanted diamonds to beams of swift uranium and gold ions (~1 GeV) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence inte
We experimentally discovered that Al2O3 and MgO exhibit well-pronounced nanometric modifications on the surfaces when irradiated under grazing incidence with 23 MeV I beam, in contrast to normal incidence irradiation with the same ion beam when no da
We report the synthesis via an indium flux method of a novel single-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7 structure type. In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentially occupy, respectively, the 12d and 1
Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dang