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Recent ARPES measurements of single-layer 1H-TaS2 grown on Au(111) suggest strong electron doping from the substrate. In addition, STM/STS measurements on this system show suppression of the charge-density-wave (CDW) instability that occurs in bulk 2H-TaS2. We present results from ab initio DFT calculations of free-standing single-layer 1H-TaS2 to explore the effects of doping on the CDW. In the harmonic approximation, we find that a lattice instability along the Gamma-M line occurs in the undoped monolayer, consistent with the bulk 3x3 CDW ordering vector. Doping removes the CDW instability, in agreement with the experimental findings. The doping and momentum dependence of both the electron-phonon coupling and of the bare phonon energy (unscreened by metallic electrons) determine the stability of lattice vibrations. Electron doping also causes an expansion of the lattice, so strain is a secondary but also relevant effect.
Recent experiments have found that monolayer 1H-TaS2 grown on Au(111) lacks the charge density wave (CDW) instability exhibited by bulk 2H-TaS2. Additionally, angle-resolved photoemission spectroscopy measurements suggest that the monolayer becomes s
Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy
Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy respectively.
We investigate the Ti-doping effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-doping induced phase evolution seems regular with increasi
Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and, a large n