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Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG) heterostructures with characteristics very different from those in Pt/YIG. We show that the SMR in Pt/NiO/YIG strongly correlates with spin conductance, both sharing very strong temperature dependence due to antiferromagnetic magnons and spin fluctuation. This phenomenon indicates that spin current generated by spin Hall effect in the Pt transmits through the insulating NiO and is reflected from the NiO/YIG interface. Inverted SMR has been observed below a temperature which increases with the NiO thickness, suggesting spin-flip reflection from the antiferromagnetic NiO exchange coupled with the YIG.
We report large enhancement of thermally injected spin current in normal metal (NM)/antiferromagnet(AF)/yttrium iron garnet(YIG), where a thin AF insulating layer of NiO or CoO can enhance spin current from YIG to a NM by up to a factor of 10. The sp
The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these
A magnon Nernst effect, an antiferromagnetic analogue of the magnon Hall effect in ferromagnetic insulators, has been studied experimentally for a layered antiferromagnetic insulator MnPS3 in contact with two Pt strips. Thermoelectric voltage in the
Electrical manipulation of emergent phenomena due to nontrivial band topology is a key to realize next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy q
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts, one of which