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تسجيل مستخدم جديدDesign of L2_1-type antiferromagnetic semiconducting full-Heusler compounds: A first principles DFT+GW study
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Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these compounds G-type antiferromagnetism is the ground state and that they are all either emiconductors (Cr$_2$ScP, Cr$_2$TiZn, V$_2$ScP, V$_2$TiSi, and V$_3$Al) or semimetals (Mn$_2$MgZn and Mn$_2$NaAl). The many-body corrections have a minimal effect on the electronic band structure with respect to the standard electronic structure calculations.
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The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applica
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