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Using infrared spectroscopy combined with ab initio methods we study reactions of H$_2$O and CO inside the confined spaces of Zn-MOF-74 channels. Our results show that, once the water dissociation reaction H$_2$O$;rightarrow;$OH+H takes place at the metal centers, the addition of 40 Torr of CO at 200 $^{circ}$C starts the production of formic acid via OH+H+CO$;rightarrow;$HCO$_2$H. Our detailed analysis shows that the overall reaction H$_2$O+CO$;rightarrow;$HCO$_2$H takes place in the confinement of MOF-74 without an external catalyst, unlike the same reaction on flat surfaces. This discovery has several important consequences: It opens the door to a new set of catalytic reactions inside the channels of the MOF-74 system, it suggests that a recovery of the MOFs adsorption capacity is possible after it has been exposed to water (which in turn stabilizes its crystal structure), and it produces the important industrial feedstock formic acid.
Controlled organic functionalization of silicon surfaces as integral part of semiconductor technology offers new perspectives for a wide range of applications. The high reactivity of the silicon dangling bonds, however, presents a major hindrance for
Metal organic framework (MOF) materials in general, and MOF-74 in particular, have promising properties for many technologically important processes. However, their instability under humid conditions severely restricts practical use. We show that thi
Several chemical reactions catalyzed by plasmonic nanoparticles show enhanced rates under visible-light-excitation of the localized surface plasmon resonance of the nanoparticles. But it has been argued that there is an associated photothermal effect
Here we highlight recent progress in the field of computational chemistry of nanoporous materials, focusing on methods and studies that address the extraordinary dynamic nature of these systems: the high flexibility of their frameworks, the large-sca
Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexyl