We report the observation of the Goos-Hanchen effect in graphene via a weak value amplification scheme. We demonstrate that the amplified Goos-Hanchen shift in weak measurements is sensitive to the variation of graphene layers. Combining the Goos-Hanchen effect with weak measurements may provide important applications in characterizing the parameters of graphene.
The spatial and the angular variants of the Goos-Hanchen (GH) and the Imbert-Federov (IF) beam shifts contribute in a complex interrelated way to the resultant beam shift in partial reflection at planar dielectric interfaces. Here, we show that the a
ngular GH and the two variants of the IF effects can be decoupled, amplified and separately observed by weak value amplification and subsequent conversion of spatial$leftrightarrow$angular nature of the beam shifts using appropriate pre and post selection of polarization states. We experimentally demonstrate such decoupling and illustrate various other intriguing manifestations of weak measurements by employing optimized pre and post selections (based on the eigen polarization states of the shifts) elliptical and / or linear polarization basis. The demonstrated ability to amplify, controllably decouple or combine the beam shifts via weak measurements may prove to be valuable for understanding the different physical contributions of the effects and for their applications in sensing and precision metrology
We present a proposal to manipulate the Goos-Hanchen shift of a light beam via a coherent control field, which is injected into a cavity configuration containing the two-level atomic medium. It is found that the lateral shifts of the reflected and tr
ansmitted probe beams can be easily controlled by adjusting the intensity and detuning of the control field. Using this scheme, the lateral shift at the fixed incident angle can be enhanced (positive or negative) under the suitable conditions on the control field, without changing the structure of the cavity.
We demonstrate, for the first time, a scheme that generates radially-polarized light using Goos-Hanchen shift of a cylindrically symmetric Total Internal Reflection. It allows ultra-broadband radial polarization conversion for wavelengths differing >1 micron.
We theoretically predict a giant quantized Goos-H{a}nchen (GH) effect on the surface of graphene in quantum Hall regime. The giant quantized GH effect manifests itself as an angular shift whose quantized step reaches the order of mrad for light beams
impinging on a graphene-on-substrate system. The quantized GH effect can be attributed to quantized Hall conductivity, which corresponds to the discrete Landau levels in quantum Hall regime. We find that the quantized step can be greatly enhanced for incident angles near the Brewster angle. Moreover, the Brewster angle is sensitive to the Hall conductivity, and therefore the quantized GH effect can be modulated by the Fermi energy and the external magnetic field. The giant quantized GH effect offers a convenient way to determine the quantized Hall conductivity and the discrete Landau levels by a direct optical measurement.
The Goos-Hanchen effect of light reflected from sandwich (three-layered) structures composed of a superconducting YBa2Cu3O7 film and two different dielectric films is investigated theoretically. It has been shown that optical anisotropy of YBa2Cu3O7
film, as well as its positions in the three-layer specimen, strongly effects on the lateral shift values. We have shown that, for all positions of the superconducting film in the three-layered structure, variation of temperature makes possible to control the values of the lateral shift of TE-polarized light at the incidence angles close to pseudo-Brewster angles, whereas for TM-polarized light the lateral shift is only significant at grazing incidence.