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Manipulating materials at the nanometer scale is challenging, particularly if alignment with nanoscale electrodes is desired. Here we describe a lithography-free, self-aligned nanotrench ablation (SANTA) technique to create nanoscale trenches in a polymer like poly(methyl) methacrylate (PMMA). The nanotrenches are self-aligned with carbon nanotube (CNT) and graphene ribbon electrodes through a simple Joule heating process. Using simulations and experiments we investigate how the Joule power, ambient temperature, PMMA thickness, and substrate properties can improve the spatial resolution of this technique. We achieve sub-20 nm nanotrenches for the first time, by lowering the ambient temperature and reducing the PMMA thickness. We also demonstrate a functioning nanoscale resistive memory (RRAM) bit self-aligned with a CNT control device, achieved through the SANTA approach. This technique provides an elegant and inexpensive method to probe nanoscale devices using self-aligned electrodes, without the use of conventional alignment or lithography steps.
The temperature distribution in nanowires due to Joule heating is studied analytically using a continuum model and a Greens function approach. We show that the temperatures reached in nanowires can be much lower than that predicted by bulk models of
Nonlinear devices, such as transistors, enable contemporary computing technologies. We theoretically investigate nonlinear effects, bearing a high fundamental scientific and technical relevance, in magnonics with emphasis on superconductor-ferromagne
Electron microscopy (EM) has been instrumental in our understanding of biological systems ranging from subcellular structures to complex organisms. Although EM reveals cellular morphology with nanoscale resolution, it does not provide information on
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohms Law and Newtons Law of Cooling
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InA