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The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories hav
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$rightarrow$ON state transition that enables this novel CRS application.
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using rout
Recent experiments on layered {alpha}-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders {alpha}-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material based electr
Flat combining (FC) is a synchronization paradigm in which a single thread, holding a global lock, collects requests by multiple threads for accessing a concurrent data structure and applies their combined requests to it. Although FC is sequential, i