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تسجيل مستخدم جديدValence fluctuations in Sn(Pb)$_2$P$_2$S$_6$ ferroelectrics
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The valence fluctuations which are related to the charge disproportionation of phosphorous ions $P^{4+} + P^{4+}rightarrow P^{3+} + P^{5+}$ are the origin of ferroelectric and quantum paraelectric states in Sn(Pb)$_2$P$_2$S$_6$ semiconductors. They involve recharging of SnPS$_3$ or PbPS$_3$ structural groups which could be represented as half-filled sites in the crystal lattice. Temperature-pressure phase diagram for Sn$_2$P$_2$S$_6$ compound and temperature-composition phase diagram for (Pb$_y$Sn$_{1-y}$)$_2$P$_2$S$_6$ mixed crystals, which include tricritical points and where a temperature of phase transitions decrease to 0 K, together with the data about some softening of low energy optic phonons and rise of dielectric susceptibility at cooling in quantum paraelectric state of Pb$_2$P$_2$S$_6$, are analyzed by GGA electron and phonon calculations and compared with electronic correlations models. The anharmonic quantum oscillators model is developed for description of phase diagrams and temperature dependence of dielectric susceptibility.
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The dipole ordering in Sn(Pb)$_2$P$_2$S(Se)$_6$ materials may be tuned by chemical substitution realizing a ferroelectric quantum phase transition and quantum glassy or relaxor type phenomena on different parts of the phase diagram. The introduction
of Ge impurity increases the temperature of the phase transitions and initiates a more pronounced Ising type critical anomaly in Sn$_2$P$_2$S$_6$ crystal, does not shift the coordinate of the Lifshitz point $x_{textrm {LP}}$ in Sn$_2$P$_2$(Se$_x$S$_{1-x}$)$_6$ mixed crystals, induces the appearance of a ferroelectric phase transition in quantum paraelectrics Pb$_2$P$_2$S$_6$ and inhomogeneous polar ordering in (Pb$_{0.7}$Sn$_{0.3}$)$_2$P$_2$S(Se)$_6$ crystals. For Pb$_2$P$_2$S$_6$ crystal, the real part of the dielectric susceptibility in the quantum critical regime varies as $1/T^2$ instead of the expected $1/T^3$ behavior for uniaxial materials. This can be partially explained by a screening phenomenon in the semiconductor materials of the Sn(Pb)$_2$P$_2$S(Se)$_6$ system, which weakens the long range electric dipole interactions, and also provides, at high temperatures, a critical behavior near the Lifshitz point (studied by thermal diffusivity) similar to the one predicted in the case of systems with short range interactions. At low temperatures, a quantum critical behavior in Pb$_2$P$_2$S$_6$ crystal can be established by the nonlinear coupling between polar and antipolar fluctuations. An increase in thermal conductivity is induced by Ge impurity in Pb$_2$P$_2$S$_6$ crystal, which is explained through the weakening of the acoustic phonons resonance scattering by soft optic phonons because of the appearance of ferroelectric phase polar clusters.
For Sn$_2$P$_2$S$_6$ ferroelectrics the second order phase transitions line is observed until reaching the tricritical point at transition temperature lowering to 250 K by compression. Observed temperature-pressure phase diagram agrees with simulated
diagram by MC calculations based on early founded by DFT study local potential for Sn$_2$P$_2$S$_6$ crystals. In addition to the tricritical point, the possibility of disordered and quadrupolar phases occurrence was shown. For mixed crystals with tin by lead substitution, the investigated ultrasound, hypersound and low frequency dielectric properties also reveal appearance of heterophase peculiarities at decreasing of ferroelectric transition temperature below so named temperature waterline near 250~K. The tricriticality at similar temperature level also appears in mixed crystals at sulfur by selenium substitution. Such behavior agree with Blume-Emery-Griffiths (BEG) model, that is appropriated for investigated ferroelectric system with three-well local potential for the order parameter (spontaneous polarization) fluctuations.
Layered multi-ferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized CuInP$_2$S$_6$ is a layered material that displays ferrielectric behavior at room temperature. When s
ynthesized with Cu deficiencies, CuInP$_2$S$_6$ spontaneously phase segregates to form ferrielectric CuInP$_2$S$_6$ (CIPS) and paraelectric In$_{4/3}$P$_2$S$_6$ (IPS) domains in a two-dimensional self-assembled heterostructure. Here, we study the effect of hydrostatic pressure on the structure of Cu-deficient CuInP$_2$S$_6$ by Raman spectroscopy measurements up to 20 GPa. Detailed analysis of the frequencies, intensities, and linewidths of the Raman peaks reveals four discontinuities in the spectra around 2, 10, 13 and 17 GPa. At ~2 GPa, we observe a structural transition initiated by the diffusion of IPS domains, which culminates in a drastic reduction of the number of peaks around 10 GPa. We attribute this to a possible monoclinic-trigonal phase transition at 10 GPa. At higher pressures (~ 13 GPa), significant increases in peak intensities and sharpening of the Raman peaks suggest a bandgap-lowering and an isostructural electronic transition, with a possible onset of metallization at pressures above 17 GPa. When the pressure is released, the structure again phase-separates into two distinct chemical domains within the same single crystalline framework -- however, these domains are much smaller in size than the as-synthesized material resulting in suppression of ferroelectricity through nanoconfinement. Hydrostatic pressure can thus be used to tune the electronic and ferrielectric properties of Cu-deficient layered CuInP$_2$S$_6$.
Using Landau-Ginsburg-Devonshire approach and available experimental results we reconstruct the thermodynamic potential of the layered ferroelectric CuInP$_2$S$_6$ (CIPS), which is expected to be applicable a wide range of temperatures and applied pr
essures. The analysis of temperature dependences of the dielectric permittivity and lattice constants for different applied pressures unexpectedly reveals the critically important role of the nonlinear electrostriction in this material. With the nonlinear electrostriction included we calculated temperature and pressure phase diagrams and spontaneous polarization of bulk CIPS. Using the coefficients of the reconstructed four-well thermodynamic potential, we study the strain-induced phase transitions in thin epitaxial CIPS films, as well as the stress-induced phase transitions in CIPS nanoparticles, which shape varies from prolate needles to oblate disks. We reveal the strong influence of the mismatch strain, elastic stress and shape anisotropy on the polar properties and phase diagrams of nanoscale CIPS. Also, we derived analytical expressions, which allow the elastic control of the nanoscale CIPS polar properties. Hence obtained results can be of particular interest for the strain-engineering of nanoscale layered nanoferroelectrics.
Detailed ${}^{31}$P nuclear magnetic resonance (NMR) measurements are presented on well-characterized single crystals of antiferromagnetic van der Waals Ni$_2$P$_2$S$_6$. An anomalous breakdown is observed in the proportionality of the NMR shift $K$
with the bulk susceptibility $chi$. This so-called $K$$-$$chi$ anomaly occurs in close proximity to the broad peak in $chi(T)$, thereby implying a connection to quasi-2D magnetic correlations known to be responsible for this maximum. Quantum chemistry calculations show that crystal field energy level depopulation effects cannot be responsible for the $K$$-$$chi$ anomaly. Appreciable in-plane transferred hyperfine coupling is observed, which is consistent with the proposed Ni$-$S$-$Ni super- and Ni$-$S$-$S$-$Ni super-super-exchange coupling mechanisms. Magnetization and spin$-$lattice relaxation rate ($T_1^{-1}$) measurements indicate little to no magnetic field dependence of the Neel temperature. Finally, $T_1^{-1}(T)$ evidences relaxation driven by three-magnon scattering in the antiferromagnetic state.
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