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Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates. Here, for the first time to the best of our knowledge, a mixture of N-Methyl-2-pyrrolidone (NMP) and deoxygenated water is employed as a subphase in Langmuir Blodgett (LB) trough for assembling the nanosheets followed by their deposition on substrates and studied its field effect transistor (FET) characteristics. Electron microscopy reveals the presence of densely aligned, crystalline, ultra-thin sheets of pristine phosphorene having lateral dimensions larger than hundred of microns. Furthermore, these assembled nanosheets retain their electronic properties and show a high current modulation of 10^4 at room temperature in FET devices. The proposed technique provides semiconducting phosphorene thin films that are amenable for large area applications.
Single walled carbon nanotubes exhibit advanced electrical and surface properties useful for high performance nanoelectronics. Important to future manufacturing of nanotube circuits is large scale assembly of SWNTs into aligned forms. Despite progres
A plethora of different morphologies are fabricated by the self assembly of molybdenum disulphide (MoS2) exfoliated flakes with the help of Langmuir-Blodgett (LB) technique at the liquid/air interface. The MoS2 flakes are chemically exfoliated in var
This paper reports the pi-A isotherms and spectroscopic characteristics of mixed Langmuir and Langmuir-Blodgett (LB) films of non-amphiphilic carbazole (CA) molecules mixed with polymethyl methacrylate (PMMA) and stearic acid (SA). pi-A isotherm stud
Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counter
Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling.