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Magnetic chiral skyrmions are vortex like spin structures that appear as stable or meta-stable states in magnetic materials due to the interplay between the symmetric and antisymmetric exchange interactions, applied magnetic field and/or uniaxial anisotropy. Their small size and internal stability make them prospective objects for data storage but for this, the controlled switching between skyrmion states of opposite polarity and topological charge is essential. Here we present a study of magnetic skyrmion switching by an applied magnetic field pulse based on a discrete model of classical spins and atomistic spin dynamics. We found a finite range of coupling parameters corresponding to the coexistence of two degenerate isolated skyrmions characterized by mutually inverted spin structures with opposite polarity and topological charge. We demonstrate how for a wide range of material parameters a short inclined magnetic field pulse can initiate the reliable switching between these states at GHz rates. Detailed analysis of the switching mechanism revealed the complex path of the system accompanied with the excitation of a chiral-achiral meron pair and the formation of an achiral skyrmion.
We numerically demonstrate an ultrafast method to create $textit{single}$ skyrmions in a $textit{collinear}$ ferromagnetic sample by applying a picosecond (effective) magnetic field pulse in the presence of Dzyaloshinskii-Moriya interaction. For smal
We show that continuous and spin-lattice models of chiral ferro- and antiferromagnets provide the existence of an infinite number of stable soliton solutions of any integer topological charge. A detailed description of the morphology of new skyrmions
The magnetic field associated with a picosecond intense electron pulse is shown to switch locally the magnetization of extended films and nanostructures and to ignite locally spin waves excitations. Also, topologically protected magnetic textures suc
We deal with magnetic structures that attain integer and half-integer skyrmion numbers. We model and solve the problem analytically, and show how the solutions appear in materials that engender distinct, very specific physical properties, and use the
The processional switching mechanism governs magnetic switching in magnetic tunnel junctions (MTJs) in the sub-nanosecond range, which limits the application of spin transfer torque magnetic random access memory (STT-MRAM) in the ultrafast region. In