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تسجيل مستخدم جديدBreakdown of the Kondo insulating state in SmB6 by introducing Sm vacancies
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SmB6 is a proposed topological Kondo insulator where the presence of topological nontriviality can be tuned by variations in the Sm valence. Experimentally, Sm valence can be changed by tuning stoichiometry of SmB6. We show that Raman scattering can detect vacancies lower than 1% of Sm sites in SmB6 crystal by probing the intensity of defect-induced scattering of the acoustic phonon branch at 10~meV. In the electronic Raman spectra of SmB6 at temperatures below 130~K, we observe features developing in A$_{1g}$ and E$_g$ symmetries at 100 and 41~meV which we assign to excitations between hybridized bands, and depressed spectral weight below 20~meV associated with the hybridization gap. With the increased number of Sm vacancies up to 1% we observe an increase of spectral weight below 20~meV showing that the gap is filling in with electronic states. For the sample with the lowest number of vacancies the in-gap exciton excitations with long lifetimes protected by hybridization gap are observed at 16-18~meV in E$_g$ and T$_{2g}$ symmetries. These excitations broaden as a decrease in the lifetime with increasing number of vacancies and are quenched by the presence of in-gap states at concentration of Sm vacancies of about 1%. Based on this study we suggest that only the most stoichiometric SmB6 samples have a bulk gap necessary for topological Kondo insulators.
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Topological insulators host spin-polarized surface states which robustly span the band gap and hold promise for novel applications. Recent theoretical predictions have suggested that topologically protected surface states may similarly span the hybri
dization gap in some strongly correlated heavy fermion materials, particularly SmB6. However, the process by which the Sm 4f electrons hybridize with the 5d electrons on the surface of SmB6, and the expected Fermi-level gap in the density of states out of which the predicted topological surface states must arise, have not been directly measured. We use scanning tunneling microscopy to conduct the first atomic resolution spectroscopic study of the cleaved surface of SmB6, and to reveal a robust hybridization gap which universally spans the Fermi level on four distinct surface morphologies despite shifts in the f band energy. Using a cotunneling model, we separate the density of states of the hybridized bands from which the predicted topological surface states must be disentangled. On all surfaces we observe residual spectral weight spanning the hybridization gap down to the lowest T, which is consistent with a topological surface state.
A necessary element for the predicted topological state in Kondo insulator SmB$_6$ is the hybridization gap which opens in this compound at low temperatures. In this work, we present a comparative study of the in-gap density of states due to Sm vacan
cies by Raman scattering spectroscopy and heat capacity for samples where the number of Sm vacancies is equal to or below 1 %. We demonstrate that hybridization gap is very sensitive to the presence of Sm vacancies. At the amount of vacancies above 1 % the gap fills in with impurity states and low temperature heat capacity is enhanced.
Motivated by the observation of light surface states in SmB6, we examine the effects of surface Kondo breakdown in topological Kondo insulators. We present both numerical and analytic results which show that the decoupling of the localized moments at
the surface disturbs the compensation between light and heavy electrons and dopes the Dirac cone. Dispersion of these uncompensated surface states are dominated by inter-site hopping, which leads to a much lighter quasiparticles. These surface states are also highly durable against the effects of surface magnetism and decreasing thickness of the sample.
We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Gamma$ points, due to hybridization between
the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $Gamma$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $Gamma$ point.
Temperature dependence of the electronic structure of SmB6 is studied by high-resolution ARPES down to 1 K. We demonstrate that there is no essential difference for the dispersions of the surface states below and above the resistivity saturating anom
aly (~ 3.5 K). Quantitative analyses of the surface states indicate that the quasi-particle scattering rate increases linearly as a function of temperature and binding energy, which differs from Fermi-Liquid behavior. Most intriguingly, we observe that the hybridization between the d and f states builds gradually over a wide temperature region (30 K < T < 110 K). The surface states appear when the hybridization starts to develop. Our detailed temperature-dependence results give a complete interpretation of the exotic resistivity result of SmB6, as well as the discrepancies among experimental results concerning the temperature regions in which the topological surface states emerge and the Kondo gap opens, and give new insights into the exotic Kondo crossover and its relationship with the topological surface states in the topological Kondo insulator SmB6.
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