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Using density-functional ab initio theoretical techniques, we study (Ga$_{1-x}$In$_x$)$_2$O$_3$ in both its equilibrium structures (monoclinic $beta$ and bixbyite) and over the whole range of composition. We establish that the alloy exhibits a large and temperature-independent miscibility gap. On the low-$x$ side, the favored phase is isostructural with $beta$-Ga$_2$O$_3$; on the high-$x$ side, it is isostructural with bixbyite In$_2$O$_3$. The miscibility gap opens between approximately 15% and 55% In content for the bixbyite alloy grown epitaxially on In$_2$O$_3$, and 15% and 85% In content for the free-standing bixbyite alloy. The gap, volume and band offsets to the parent compound also exhibit anomalies as function of $x$. Specifically, the offsets in epitaxial conditions are predominantly type-B staggered, but have opposite signs in the two end-of-range phases.
Based on first-principles calculations, we show that the maximum reachable concentration $x$ in the (Ga$_{1-x}$In$_x$)$_2$O$_3$ alloy in the low-$x$ regime (i.e. In solubility in $beta$-Ga$_2$O$_3$) is around 10%. We then calculate the band alignment
Using density-functional ab initio calculations, we provide a revised phase diagram of (Ga$_{1-x}$In$_{x})_2$O$_3$. Three phases --monoclinic, hexagonal, cubic bixbyite-- compete for the ground state. In particular, in the $x$$sim$0.5 region we expec
$beta$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $g
For powder samples of CuAl$_{1-x}$Fe$_x$O$_2$ ($x =$ 0, 0.01, 0.05, and 0.1), measured optical properties are compared with model simulations and phonon spectra are compared with simulations based on weighted dynamical matrix approach.
We report measurements and analyses of resistivity, thermopower, and thermal conductivity of polycrystalline samples of perovskite LaRh$_{1-x}$Ni$_x$O$_3$. The thermopower is found to be large at 800 K (185 $mu$V/K for $x=$0.3), which is ascribed to