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We report a new attractive critical point occurring in the Anderson localization scaling flow of symplectic models on fractals. The scaling theory of Anderson localization predicts that in disordered symplectic two-dimensional systems weak antilocalization effects lead to a metal-insulator transition. This transition is characterized by a repulsive critical point above which the system becomes metallic. Fractals possess a non-integer scaling of conductance in the classical limit which can be continuously tuned by changing the fractal structure. We demonstrate that in disordered symplectic Hamiltonians defined on fractals with classical conductance scaling $g sim L^{-varepsilon}$, for $0 < varepsilon < beta_mathrm{max} approx 0.15$, the metallic phase is replaced by a critical phase with a scale invariant conductance dependent on the fractal dimensionality. Our results show that disordered fractals allow an explicit construction and verification of the $varepsilon$ expansion.
Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here
We show that weak antilocalization by disorder competes with resonant Andreev reflection from a Majorana zero-mode to produce a zero-voltage conductance peak of order e^2/h in a superconducting nanowire. The phase conjugation needed for quantum inter
The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in prev
We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affec
Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface st