اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSurfactant Antimony enhanced Indium incorporation on InGaN (000-1) surface: a DFT study
22
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
InGaN is an ideal alloy system for optoelectronic devices due its tunable band gap. Yet high-quality InGaN requires high In concentration, which is a challenging issue that limits its use in green-light LEDs and other devices. In this paper, we investigated the surfactant effect of Sb on the In incorporation on InGaN (000-1) surface via first-principles approaches. Surface phase diagram was also constructed to determine surface structures under different growth conditions. By analyzing surface stress under different structures, we found that Sb adatom can induce tensile sites in the cation layer, enhancing the In incorporation. These fi ndings may provide fundamental understandings and guidelines for the growth of InGaN with high In concentration.
قيم البحث
اقرأ أيضاً
We have analyzed by Scanning Tunnelling Microscopy (STM) thin films made of few (3-5) graphene layers grown on the C terminated face of 6H-SiC in order to identify the nature of the azimuthal disorder reported in this material. We observe superstruct
ures which are interpreted as Moire patterns due to a misorientation angle between consecutive layers. The presence of stacking faults is expected to lead to electronic properties reminiscent of single layer graphene even for multilayer samples. Our results indicate that this apparent electronic decoupling of the layers can show up in STM data.
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence
and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N$_{2}$ formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination.
In this paper, we report our study on gold (Au) films with different thicknesses deposited on single layer graphene (SLG) as surface enhanced Raman scattering (SERS) substrates for the characterization of rhodamine (R6G) molecules. We find that an Au
film with a thickness of ~7 nm deposited on SLG is an ideal substrate for SERS, giving the strongest Raman signals for the molecules and the weakest photoluminescence (PL) background. While Au films effectively enhance both the Raman and PL signals of molecules, SLG effectively quenches the PL signals from the Au film and molecules. The former is due to the electromagnetic mechanism involved while the latter is due to the strong resonance energy transfer from Au to SLG. Hence, the combination of Au films and SLG can be widely used in the characterization of low concentration molecules with relatively weak Raman signals.
This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of t
he samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.
The surface segregation of indium atoms in InGaAs is investigated using first-principles calculations based on density functional theory. Through the calculation of segregation energies for (100), (110), and (111) surfaces of GaAs we analyze the deci
sive role of surface orientation on indium segregation. Further, our calculations reveal that the variation of segregation energy as a function of applied strain strongly depends on surface reconstruction. Obtained segregation energy trends are discussed in light of atomic bonding probed via integrated crystal orbital Hamilton population. Results presented in this paper are anticipated to guide experimental efforts to achieve control on In segregation by managing As-flux along with the application of strain.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
