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تسجيل مستخدم جديدElectroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes
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We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.
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Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radi
ation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs with a spacing of 10 $mu$m were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current above an effective voltage threshold of 150V, which was interpreted according to the theory of Space Charge Limited Current. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced bright electroluminescent emission from native neutrally-charged nitrogen-vacancy centers ($NV^0$); the acquired spectra highlighted the absence of EL associated with radiation damage.
The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in thi
s work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 {mu}m in depth) graphitic micro-electrodes with spacing of 9 {mu}m were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trapping at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times.
We report on an ion implantation technique utilizing a screening mask made of SiO$_2$ to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, br
ings the location of the highest NV density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 10$^{11}$ cm$^2$ and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of $mu$s.
Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal f
luorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60 to 70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size.
We show a marked reduction in the emission from nitrogen-vacancy (NV) color centers in single crystal diamond due to exposure of the diamond to hydrogen plasmas ranging from 700{deg}C to 1000{deg}C. Significant fluorescence reduction was observed ben
eath the exposed surface to at least 80mm depth after ~10 minutes, and did not recover after post-annealing in vacuum for seven hours at 1100{deg}C. We attribute the fluorescence reduction to the formation of NVH centers by the plasma induced diffusion of hydrogen. These results have important implications for the formation of nitrogen-vacancy centers for quantum applications, and inform our understanding of the conversion of nitrogen-vacancy to NVH, whilst also providing the first experimental evidence of long range hydrogen diffusion through intrinsic high-purity diamond material.
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