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It is analyzed the hydrodynamics of carriers (charge and heat motion) and phonons (heat motion) in semiconductors in the presence of constant electric fields. This is done in terms of a so-called Higher-Order Generalized Hydrodynamics (HOGH), also referred to as Mesoscopic Hydro-Thermodynamics (MHT), that is, covering phenomena involving motions displaying variations short in space and fast in time and being arbitrarily removed from equilibrium, as it is the case in modern electronic devices. The particular case of a MHT of order 1 is described, covering wire samples from macro to nano sizes. Electric and thermal conductivities are obtained. As the size decreases towards the nanometric scale, the MHT of order 1 produces results that in some cases greatly differ from those of the usual hydro-thermodynamics. The so-called Maxwell times associated to the different fluxes present in MHT are evidenced and analyzed; they have a quite relevant role in determining the characteristics of the motion.
A family of the so-called Maxwell times which arises in the contexto of Higher-Order Generalized Hydrodynamics (also called Mesoscopic Hydro-Thermodynamics) is evidenced. This is done in the framework of a HOGH build within a statistical foundation i
Thermal transport in classical fluids is analyzed in terms of a Higher-Order Generalized Hydrodynamics (or Mesoscopic Hydro-Thermodynamics), that is, depending on the evolution of the energy density and its fluxes of all orders. It is derived in term
We propose a method that can consecutively modulate the topological orders or the number of helical edge states in ultrathin film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a transition f
When the excitation of carriers in real space is focused down to the nanometer scale, the carrier system can no longer be viewed as homogeneous and ultrafast transport of the excited carrier wave packets occurs. In state-of-the-art semiconductor stru
We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external magnetic fi