ﻻ يوجد ملخص باللغة العربية
We observe geometric resonance features of composite fermions on the flanks of the even denominator { u} = 1/2 fractional quantum Hall state in high-mobility two-dimensional electron and hole systems confined to wide GaAs quantum wells and subjected to a weak, strain-induced, unidirectional periodic potential modulation. The features provide a measure of how close to { u} = 1/2 the system stays single-component and supports a composite fermion Fermi sea before transitioning into a { u} = 1/2 fractional quantum Hall state, presumably the two-component {Psi}331 state.
Via the application of parallel magnetic field, we induce a single-layer to bilayer transition in two-dimensional electron systems confined to wide GaAs quantum wells, and study the geometric resonance of composite fermions (CFs) with a periodic dens
A quantum statistical theory is developed for a fractional quantum Hall effects in terms of composite bosons (fermions) each of which contains a conduction electron and an odd (even) number of fluxons. The cause of the QHE is by assumption the phonon
We report quantitative measurements of the impact of alloy disorder on the $ u=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ u=5/2$
In bilayer quantum Hall systems at filling fractions near nu=1/2+1/2, as the spacing d between the layers is continuously decreased, intra-layer correlations must be replaced by inter-layer correlations, and the composite fermion (CF) Fermi seas at l
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ u=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ u=1/