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We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ u=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ u=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $ u=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($Psi_{331}$) state.
We report the observation of developing fractional quantum Hall states at Landau level filling factors $ u = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large ele
The nature of the fractional quantum Hall effect at $ u=1/2$ observed in wide quantum wells almost three decades ago is still under debate. Previous studies have investigated it by the variational Monte Carlo method, which makes the assumption that t
We present a comprehensive numerical study of a microscopic model of the fractional quantum Hall system at filling fraction $ u = 5/2$, based on the disc geometry. Our model includes Coulomb interaction and a semi-realistic confining potential. We al
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. W
We report quantitative measurements of the impact of alloy disorder on the $ u=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ u=5/2$