اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدRoom-temperature antiferromagnetic memory resistor
174
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach in which magnetic fields are replaced by electrical means for reading and writing. This concept may eventually leave the sensitivity of FMs to magnetic fields as a mere weakness for retention and the FM stray fields as a mere obstacle for high-density memory integration. In this paper we report a room-temperature bistable antiferromagnetic (AFM) memory which produces negligible stray fields and is inert in strong magnetic fields. We use a resistor made of an FeRh AFM whose transition to a FM order 100 degrees above room-temperature, allows us to magnetically set different collective directions of Fe moments. Upon cooling to room-temperature, the AFM order sets in with the direction the AFM moments pre-determined by the field and moment direction in the high temperature FM state. For electrical reading, we use an antiferromagnetic analogue of the anisotropic magnetoresistance (AMR). We report microscopic theory modeling which confirms that this archetypical spintronic effect discovered more than 150 years ago in FMs, can be equally present in AFMs. Our work demonstrates the feasibility to realize room-temperature spintronic memories with AFMs which greatly expands the magnetic materials base for these devices and offers properties which are unparalleled in FMs.
قيم البحث
اقرأ أيضاً
In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence of dipolar
fields in ferromagnets, restricting the formation of ultra-small topological textures, and the deleterious skyrmion Hall effect when driven by spin torques have thus far inhibited their practical implementations. Antiferromagnetic analogues, which are predicted to demonstrate relativistic dynamics, fast deflection-free motion and size scaling have recently come into intense focus, but their experimental realizations in natural antiferromagnetic systems are yet to emerge. Here, we demonstrate a family of topological antiferromagnetic spin-textures in $alpha$-Fe$_2$O$_3$ - an earth-abundant oxide insulator - capped with a Pt over-layer. By exploiting a first-order analogue of the Kibble-Zurek mechanism, we stabilize exotic merons-antimerons (half-skyrmions), and bimerons, which can be erased by magnetic fields and re-generated by temperature cycling. These structures have characteristic sizes of the order ~100 nm that can be chemically controlled via precise tuning of the exchange and anisotropy, with pathways to further scaling. Driven by current-based spin torques from the heavy-metal over-layer, some of these AFM textures could emerge as prime candidates for low-energy antiferromagnetic spintronics at room temperature.
This work reports an exchange bias (EB) effect up to room temperature in the binary intermetallic bulk compound Mn3.04Ge0.96. The sample annealed at 700 K crystallizes in a tetragonal structure with ferromagnetic ordering, whereas, the sample anneale
d at 1073 K crystallizes in a hexagonal structure with antiferromagnetic ordering. The hexagonal Mn3.04Ge0.96 sample exhibits an EB of around 70 mT at 2 K that continues with a non-zero value up to room temperature. The exchange anisotropy is proposed to be originating from the exchange interaction between the triangular antiferromagnetic host and the embedded ferrimagnetic like clusters. The ferrimagnetic clusters develop when excess Mn atoms occupy empty Ge sites in the original triangular antiferromagnet structure of Mn3Ge.
Just as classical information systems require buffers and memory, the same is true for quantum information systems. The potential that optical quantum information processing holds for revolutionising computation and communication is therefore driving
significant research into developing optical quantum memory. A practical optical quantum memory must be able to store and recall quantum states on demand with high efficiency and low noise. Ideally, the platform for the memory would also be simple and inexpensive. Here, we present a complete tomographic reconstruction of quantum states that have been stored in the ground states of rubidium in a vapour cell operating at around 80$^o$C. Without conditional measurements, we show recall fidelity up to 98% for coherent pulses containing around one photon. In order to unambiguously verify that our memory beats the quantum no-cloning limit we employ state independent verification using conditional variance and signal transfer coefficients.
Giant spin-splitting was recently predicted in collinear antiferromagnetic materials with a specific class of magnetic space group. In this work, we have predicted a two-dimensional (2D) antiferromagnetic Weyl semimetal (WS), CrO with large spin-spli
t band structure, spin-momentum locked transport properties and high Neel temperature. It has two pairs of spin-polarized Weyl points at the Fermi level. By manipulating the position of the Weyl points with strain, four different antiferromagnetic spintronic states can be achieved: WSs with two spin-polarized transport channels (STCs), WSs with single STC, semiconductors with two STCs, and semiconductors with single STC. Based on these properties, a new avenue in spintronics with 2D collinear antiferromagnets is proposed.
The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown o
n a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
