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تسجيل مستخدم جديدInhomogeneous multi-carrier superconductivity at LaXO3/SrTiO3 (X=Al or Ti) oxide interfaces
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Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value by means of gating. Re-analyzing previous measurements, that highlight the presence of two kinds of carriers, with low and high mobility, we shall provide a description of multi-carrier magneto-transport in an inhomogeneous two-dimensional electron gas, gaining insight into the properties of the physics of the systems under investigation. We shall then show that the measured resistance, superfluid density, and tunneling spectra result from the percolative connection of superconducting puddles with randomly distributed critical temperatures, embedded in a weakly localizing metallic matrix. We shall also show that this scenario is consistent with the characteristics of the superconductor-to-metal transition driven by a magnetic field. A multi-carrier description of the superconducting state, within a weak-coupling BCS-like model, will be finally discussed.
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We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to amorphize.
Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the 2-dimensional electron gas usually observed at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates presence of a spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.
The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous superconductivity resu
lting from percolation of filamentary structures of superconducting puddles with randomly distributed critical temperatures, embedded in a non-superconducting matrix. Following the evidence that superconductivity is related to the appearance of high-mobility carriers, we model intra-puddle superconductivity by a multi-band system within a weak coupling BCS scheme. The microscopic parameters, extracted by fitting the transport data with a percolative model, yield a consistent description of the dependence of the average intra-puddle critical temperature and superfluid density on the carrier density.
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at e
ach GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained.
Oxide heterostructures are of great interest both for fundamental and applicative reasons. In particular the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ or LaTiO$_3$/SrTiO$_3$ interfaces displays many different physical properties and fun
ctionalities. However there are clear indications that the interface electronic state is strongly inhomogeneous and therefore it is crucially relevant to investigate possible intrinsic electronic mechanisms underlying this inhomogeneity. Here the electrostatic potential confining the electron gas at the interface is calculated self-consistently, finding that the electron confinement at the interface may induce phase separation, to avoid a thermodynamically unstable state with a negative compressibility. This provides a generic robust and intrinsic mechanism for the experimentally observed inhomogeneous character of these interfaces.
Electronic properties of low dimensional superconductors are determined by many-body-effects. This physics has been studied traditionally with superconducting thin films, and in recent times with two-dimensional electron gases (2DEGs) at oxide interf
aces. In this work, we show that a superconducting 2DEG can be generated by simply evaporating a thin layer of metallic Al under ultra-high vacuum on a SrTiO3 crystal, whereby Al oxidizes into amorphous insulating alumina, doping the SrTiO3 surface with oxygen vacancies. The superconducting critical temperature of the resulting 2DEG is found to be tunable with a gate voltage with a maximum value of 360 mK. A gate-induced switching between superconducting and resistive states is demonstrated. Compared to conventionally-used pulsed-laser deposition (PLD), our work simplifies to a large extent the process of fabricating oxide-based superconducting 2DEGs. It will make such systems accessible to a broad range of experimental techniques useful to understand low-dimensional phase transitions and complex many-body-phenomena in electronic systems.
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