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We construct an optimal set of single-particle states for few-electron quantum dots (QDs) using the method of natural orbitals (NOs). The NOs include also the effects of the Coulomb repulsion between electrons. We find that they agree well with the noniteracting orbitals for GaAs QDs of realistic parameters, while the Coulomb interactions only rescale the radius of the NOs compared to the noninteracting case. We use NOs to show that four-electron QDs are less susceptible to charge noise than their two-electron counterparts.
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high
We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic field-dependent $
We present a comprehensive study of the optical transitions and selection rules of variably charged single self-assembled InAs/GaAs quantum dots. We apply high resolution polarization sensitive photoluminescence excitation spectroscopy to the same qu
Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single sp