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تسجيل مستخدم جديدRecent Experimental Progress of Fractional Quantum Hall Effect: 5/2 Filling State and Graphene
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The phenomenon of fractional quantum Hall effect (FQHE) was first experimentally observed 33 years ago. FQHE involves strong Coulomb interactions and correlations among the electrons, which leads to quasiparticles with fractional elementary charge. Three decades later, the field of FQHE is still active with new discoveries and new technical developments. A significant portion of attention in FQHE has been dedicated to filling factor 5/2 state, for its unusual even denominator and possible application in topological quantum computation. Traditionally FQHE has been observed in high mobility GaAs heterostructure, but new materials such as graphene also open up a new area for FQHE. This review focuses on recent progress of FQHE at 5/2 state and FQHE in graphene.
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Recent theories suggest that the excitations of certain quantum Hall states may have exotic braiding statistics which could be used to build topological quantum gates. This has prompted an experimental push to study such states using confined geometr
ies where the statistics can be tested. We study the transport properties of quantum point contacts (QPCs) fabricated on a GaAs/AlGaAs two dimensional electron gas that exhibits well-developed fractional quantum Hall effect, including at bulk filling fraction 5/2. We find that a plateau at effective QPC filling factor 5/2 is identifiable in point contacts with lithographic widths of 1.2 microns and 0.8 microns, but not 0.5 microns. We study the temperature and dc-current-bias dependence of the 5/2 plateau in the QPC, as well as neighboring fractional and integer plateaus in the QPC while keeping the bulk at filling factor 3. Transport near QPC filling factor 5/2 is consistent with a picture of chiral Luttinger liquid edge-states with inter-edge tunneling, suggesting that an incompressible state at 5/2 forms in this confined geometry.
We compare the energy gap of the u=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect
transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.
Several topological orders have been proposed to explain the quantum Hall plateau at $ u=5/2$. The observation of an upstream neutral mode on the sample edge [Bid et al., Nature (London) 466, 585 (2010)] supports the non-Abelian anti-Pfaffian state.
On the other hand, the tunneling experiments [Radu et al., Science 320, 899 (2008); Lin et al., Phys. Rev. B 85, 165321 (2012); Baer et al., arXiv:1405.0428] favor the Halperin 331 state which exhibits no upstream modes. We find a topological order, compatible with the results of both types of experiments. That order allows both finite and zero spin polarizations. It is Abelian but its signatures in Aharonov-Bohm interferometry can be similar to those of the Pfaffian and anti-Pfaffian states.
The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. Y
et, its microscopic origin remains unidentified, and candidate model wave functions include those with undesirable abelian statistics. Here we report direct measurements of the electron spin polarization of the v = 5/2 FQH state using resistively detected nuclear magnetic resonance (NMR). We find the system to be fully polarized, which unambiguously rules out the most-likely abelian contender and thus lends strong support for the v = 5/2 state being nonabelian. Our measurements reveal an intrinsically different nature of interaction in the first-excited Landau level underlying the physics at v = 5/2.
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be ex
plained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.
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