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تسجيل مستخدم جديدInter-planar coupling dependent magnetoresistivity in high purity layered metals
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The magnetic field-induced changes in the conductivity of metals are the subject of intense interest, both for revealing new phenomena and as a valuable tool for determining their Fermi surface. Here, we report a hitherto unobserved magnetoresistive effect in ultra-clean layered metals, namely a negative longitudinal magnetoresistance that is capable of overcoming their very pronounced orbital one. This effect is correlated with the inter-layer coupling disappearing for fields applied along the so-called Yamaji angles where the inter-layer coupling vanishes. Therefore, it is intrinsically associated with the Fermi points in the field-induced quasi-one-dimensional electronic dispersion, implying that it results from the axial anomaly among these Fermi points. In its original formulation, the anomaly is predicted to violate separate number conservation laws for left- and right-handed chiral- (e.g. Weyl) fermions. Its observation in PdCoO$_2$, PtCoO$_2$ and Sr$_2$RuO$_4$ suggests that the anomaly affects the transport of clean conductors, particularly near the quantum limit.
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Spin-orbit coupling in two-dimensional systems is usually characterized by Rashba and Dresselhaus spin-orbit coupling (SOC) linear in the wave vector. However, there is a growing class of materials which instead support dominant SOC cubic in the wave
vector (cSOC), while their superconducting properties remain unexplored. By focusing on Josephson junctions in Zeeman field with superconductors separated by a normal cSOC region, we reveal a strongly anharmonic current-phase relation and complex spin structure. An experimental cSOC tunability enables both tunable anomalous phase shift and supercurrent, which flows even at the zero-phase difference in the junction. A fingerprint of cSOC in Josephson junctions is the f-wave spin-triplet superconducting correlations, important for superconducting spintronics and supporting Majorana bound states.
Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes
, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron-electron interactions can modify this coupling. Here we demonstrate the emergence of SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system features also strong electron-electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron-electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regime and to the formation of novel quasiparticles with the electron spin strongly coupled to the density.
We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled su
perlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkable change of magnetoresistance curves as compared to those measured before illumination. The experimental data along with tight-binding model calculations indicate that the illumination not only enhances the electron concentration but also suppresses the electron tunneling through the barriers.
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnet
ic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter alpha is thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, alpha could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.
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